▎ 摘　　要

NOVELTY - Integrated circuit comprises (a) substrate, and (b) array of one or more graphene field effect transistors arranged on the substrate, the graphene field effect transistor comprises (1) first nonconductive material formed over the substrate, (2) source and drain formed in the first nonconductive material, (3) gate layer formed over the channel to electrically connect the source and drain, the gate layer further comprises surface structure that overlaps the source and drain, and (4) chemically-sensitive bead provided in the reaction chamber. USE - The integrated circuit is useful for sequencing one or more strands of nucleic acids by a sequencing reaction (claimed). DETAILED DESCRIPTION - Integrated circuit comprises (A) (a) substrate, and (b) array of one or more graphene field effect transistors arranged on the substrate, the graphene field effect transistor comprises (i) (1) first nonconductive material formed over the substrate, (2) source and drain formed in the first nonconductive material, the source and drain being separated by a channel, the source and drain being formed of an electrically conductive material, the channel being formed of a layer of grapheme, (3) gate layer formed over the channel to electrically connect the source and drain, the gate layer further comprises surface structure that overlaps the source and drain, the surface structure further defines well having side walls and a bottom that extends over at least a portion of the layer graphene layer of the channel to form a reaction chamber, and (4) chemically-sensitive bead provided in the reaction chamber, the chemically-sensitive bead being configured with one or more reactants to interact with portions of the strands of nucleic acids such that the associated graphene layer detects a change in ion concentration of the reactants by change in current flow from the source to drain through activation of the graphene layer, or (ii) (1) primary layer forming a base layer, (2) secondary layer over the primary layer, the secondary layer being formed of a first nonconductive material, (3) source and drain formed in the first nonconductive material, the source and drain being separated from each other by a channel, (4) tertiary layer over the secondary layer, the tertiary layer comprises gate formed over the channel to electrically connect the source and drain, the channel has a layer of graphene, the tertiary layer further comprises surface structure that overlaps the source and drain in the secondary layer, the graphene layer is configured to detect a change in ion concentration by change in current flow from source to the drain through activation of graphene layer resulting from the performance of sequencing reaction, or (B) one or more graphene field effect transistors arranged in an array, each graphene field effect transistor comprises (1) primary layer forming a base layer, (2) intermediary layer over primary layer, and (3) tertiary layer over the secondary layer.