▎ 摘　　要

NOVELTY - The method involves forming a SOI top layer with a silicon waveguide part (S1). A SOI piece manufacturing process is carried out according to graphite rare light selective process (S2). An evaporating layer is formed with a metal surface. Metal peeling is monitored by the silicon waveguide part. A metal containing area is formed with a metal bonding area (S3). A substrate is fixed on a lower separating limit layer that is formed with an active area (S4). Metal organic chemical gas is deposited on a contact layer (S5). The metal surface is fixed with a buried ridge structure (S6). USE - Distribute feedback type silicon base mixed laser graphene manufacturing method. ADVANTAGE - The method enables providing simple process, low scattering loss and better laser effect. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a distribute feedback type silicon base mixed laser graphene manufacturing method.'(Drawing includes non-English language text)' Step for forming a SOI top layer with a silicon waveguide part (S1) Step for carrying SOI piece manufacturing process according to graphite rare light selective process (S2) Step for forming an evaporating layer with a metal surface (S3) Step for fixing a substrate on a lower separating limit layer that is formed with an active area (S4) Step for depositing a metal organic chemical gas contact layer (S5) Step for fixing a metal surface with a buried ridge structure (S6)