▎ 摘　　要

NOVELTY - The device (100) has a conductive wiring. An interlayer insulating film (50) in which the conductive wiring is embedded. The interlayer insulating film contains a base material containing silicon oxide and hollow particles are dispersed in the base material. The hollow particle is an insulator having a three-dimensional (3D) network structure. The hollow particles are selected from boron nitride and insulating graphene. A substrate (10) is formed in a spin-on-glass. USE - Semiconductor device. ADVANTAGE - The semiconductor device has excellent insulation property. DESCRIPTION OF DRAWING(S) - The drawing shows of the semiconductor device. Substrate (10) Element isolation film (20) Diffusion region (40) Interlayer insulating film (50) Semiconductor device (100)