• 专利标题:   Manufacture of boron-doped reduced graphene oxide used for electrode of capacitor, involves dispersing graphene oxide into aqueous solvent, adding borane-tetrahydrofuran to obtained dispersion solution, then refluxing, and cooling.
  • 专利号:   KR2013115469-A, KR1381316-B1
  • 发明人:   PARK S, HAN J W
  • 专利权人:   INHA IND PARTNERSHIP INST
  • 国际专利分类:   C01B031/02, C23C016/06, C23C016/38, H01M004/04
  • 专利详细信息:   KR2013115469-A 22 Oct 2013 C01B-031/02 201401 Pages: 18
  • 申请详细信息:   KR2013115469-A KR037773 12 Apr 2012
  • 优先权号:   KR037773

▎ 摘  要

NOVELTY - Manufacture of boron-doped reduced graphene oxide involves dispersing graphene oxide into an aqueous solvent to obtain graphene oxide dispersion solution, adding borane-tetrahydrofuran to the obtained dispersion solution, then refluxing, and cooling. USE - Manufacture of boron-doped reduced graphene oxide used for electrode (claimed) of capacitor. ADVANTAGE - The method enables manufacture of boron-doped reduced graphene oxide with high productivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for electrode, which comprises the boron-doped reduced graphene oxide.