▎ 摘　　要

NOVELTY - Partially altering a defect area in a layer on a substrate, comprises: receiving (S2) the layer, where the layer includes graphene and at least some defect areas in the graphene; and exposing the layer to a gas, where the gas includes hydrogen and at least one boron, aluminum, gallium, indium and/or thallium, where exposure of the layer to the gas at least partially alters the defect area. USE - The method is useful for partially altering a defect area in a layer on a substrate. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a system to implement the above method, comprising a chamber configured to receive the layer, where the layer includes at least some defects in the graphene and a container configured in communication with the chamber, where the chamber and the container are configured to expose the layer to gas including hydrogen, and boron, aluminum, gallium, indium and/or thallium and the layer is exposed to the gas to at least partially alter the defect; and (2) a chamber to implement the above method, comprising: a layer which includes at least some graphene, and gas including hydrogen, and boron, aluminum, gallium, indium and/or thallium. DESCRIPTION OF DRAWING(S) - The figure shows a schematic a flow diagram of process for implementing graphene defect alteration. Receiving the layer, which includes graphene and at least some defects in the graphene (S2) Heating the layer to produce heated layer (S4) Expose the heated layer to the first gas to produce first exposed layer (S6) Expose the first exposed layer to first inert gas to produce second exposed layer (S8) Expose the second exposed layer to the second gas to produce a third exposed layer (S10)