▎ 摘　　要

NOVELTY - Preparation of large-area ordered chiral molecular chain involves cleaning silicon carbide single crystal substrate to remove impurities on the substrate surface, heating and degassing the substrate by direct current (DC) heating, cyclically heating the substrate at 900-1400degrees Celsius for 90 minutes, cutting off DC heating, cooling the substrate to room temperature, such that double-layer graphene is uniformly formed on the substrate surface, placing resultant substrate in a preparation chamber with vacuum degree of 1x10-10 mbar to 3x10-10 mbar, such that the temperature of substrate is less than room temperature, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecules in the preparation chamber, performing chiral separation and self-assembly on the double-layer graphene surface of the substrate, and depositing molecules for a predetermined period of time when the vacuum degree in chamber is increased to 1x10-9 mbar to 3x10-9 mbar. USE - Preparation of ordered chiral molecular chain on substrate used as silicon carbide device substrate (claimed) for thin-film transistor, and multi-phase catalytic chemical and pharmaceutical engineering applications. ADVANTAGE - The method provides large-area ordered chiral molecular chain with high yield. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a silicon carbide device substrate.