• 专利标题:   Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.
  • 专利号:   WO2013144640-A1, CN104246025-A, EP2831315-A1, KR2015013142-A, US2015064098-A1, EP2831315-B1, US9399581-B2
  • 发明人:   GROBERT N, MURDOCK A T, KOOS A A
  • 专利权人:   ISIS INNOVATION LTD, ISIS INNOVATION LTD, ISIS INNOVATION LTD
  • 国际专利分类:   B82Y040/00, C01B031/04, C23C016/26, C30B025/16, C30B025/18, C30B029/02, B82Y030/00
  • 专利详细信息:   WO2013144640-A1 03 Oct 2013 C30B-025/16 201367 Pages: 39 English
  • 申请详细信息:   WO2013144640-A1 WOGB050828 28 Mar 2013
  • 优先权号:   GB005801, US789702P, KR730231

▎ 摘  要

NOVELTY - Producing a two-dimensional nanomaterial by chemical vapor deposition, comprises contacting a substrate in a reaction chamber with a first flow which contains hydrogen and a second flow which contains a precursor for the material, where the contacting takes place under conditions such that the precursor reacts in the chamber to form the material on a surface of the substrate, and the ratio of the flow rate of the first flow to the flow rate of the second flow is at least 5:1. USE - The process is useful for producing two-dimensional nanomaterial, which is graphene, where the two-dimensional nanomaterial is useful in a device, which is an electronic device e.g. semiconductor, transparent conductor, display, transistor, photovoltaic cell or diode (all claimed), where the display is flexible display for a computer screen or other visual display unit. ADVANTAGE - The process: provides two-dimensional nanomaterial, which is graphene, which is monolayer or bilayer graphene, has zigzag or armchair geometry of at least one edge and at least one edge of the two-dimensional nanomaterial is oriented parallel to (110) direction on a crystallographic orientation ((101) or (001)) on the surface of the substrate (all claimed); provides high quality single and bilayer graphene; is relatively inexpensive and scalable to produce graphene having even larger sizes; and does not require sophisticated equipment; facilitates controlled and orientated growth of two-dimensional nanomaterials; and provides large-area sheets of graphene with minimal defects by controlling the alignment of graphene domains and nucleation and nucleation density. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the two-dimensional nanomaterial obtained by the process.