▎ 摘　　要

NOVELTY - Producing a two-dimensional nanomaterial by chemical vapor deposition, comprises contacting a substrate in a reaction chamber with a first flow which contains hydrogen and a second flow which contains a precursor for the material, where the contacting takes place under conditions such that the precursor reacts in the chamber to form the material on a surface of the substrate, and the ratio of the flow rate of the first flow to the flow rate of the second flow is at least 5:1. USE - The process is useful for producing two-dimensional nanomaterial, which is graphene, where the two-dimensional nanomaterial is useful in a device, which is an electronic device e.g. semiconductor, transparent conductor, display, transistor, photovoltaic cell or diode (all claimed), where the display is flexible display for a computer screen or other visual display unit. ADVANTAGE - The process: provides two-dimensional nanomaterial, which is graphene, which is monolayer or bilayer graphene, has zigzag or armchair geometry of at least one edge and at least one edge of the two-dimensional nanomaterial is oriented parallel to (110) direction on a crystallographic orientation ((101) or (001)) on the surface of the substrate (all claimed); provides high quality single and bilayer graphene; is relatively inexpensive and scalable to produce graphene having even larger sizes; and does not require sophisticated equipment; facilitates controlled and orientated growth of two-dimensional nanomaterials; and provides large-area sheets of graphene with minimal defects by controlling the alignment of graphene domains and nucleation and nucleation density. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the two-dimensional nanomaterial obtained by the process.