▎ 摘　　要

NOVELTY - Preparing graphene nanowire film comprises preparing an anodized aluminum oxide template by electrochemical anodization using an aluminum substrate as a substrate, depositing a metal catalyst layer on the inner wall surface of the porous anodized aluminum template by atomic layer deposition, depositing graphene nanowires on the surface of the metal catalyst layer by chemical vapor deposition, removing the porous anodized aluminum template using a template removing agent, and removing the metal catalytic layer using a catalytic layer removing agent to obtain graphene nanowire, rinsing the graphene nanowires and dispersing rinsed graphene nanowires in film forming solution to obtain membrane liquid, applying membrane liquid on the surface of the substrate and drying. USE - The film is useful for thin film transistor array (claimed). ADVANTAGE - The film has good electrical conductivity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) graphene nanowire film produced by the above method; and (2) thin film transistor array, comprising array substrate and gate metal layer sequentially deposited on a surface of the array substrate, a gate insulating layer, amorphous silicon active layer, ohmic contact layer, source/drain metal layer, passivation layer and graphene nanowire film layer and the graphene nanowire film layer at least partially penetrates the passivation layer and is connected to the source/drain metal layer.