▎ 摘　　要

NOVELTY - The method involves dissolving a photoresist by using an organic solvent. A diluted photoresist solution is uniformly coated on a surface of a substrate. The photoresist solution is cured by heating and drying. A photoresist solid film is covered on the surface of the substrate. An electron beam exposure device is utilized to electron beam irradiation to the substrate with the photoresist solid film. Photoresist solid film denaturation is induced to form a carbonaceous insulating layer. An organic solution is utilized to clean the substrate by an electron beam and wash the photoresist solid film. The carbonaceous insulating layer is formed after leaving an electron beam irradiation under the substrate. USE - Method for preparing carbonaceous insulating layer of electron beam induced photoresist growth. ADVANTAGE - The method enables ensuring better excellent and stable performance, pressure resistance, stable insulating characteristics and environment-friendly and pollution-free, and obtaining carbonaceous insulating layers with better pressure resistance and reducing graphene-based field effect tube device, preparation cost of graphene based FET device and doping of metal to the graphene and avoiding phenomenon of Fermi pinning and improving environment friendly property and circulation property. The method enables ensuring better pressure-resistance, stable properties and realizing semiconductor manufacturing process based on the material in an effective manner. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a method for preparing carbonaceous insulating layer of electron beam induced photoresist growth. 1Carbon insulating layer 2Graphene channel 3Metal source drain electrode 4Metal gate 5Sample substrate