• 专利标题:   Graphene/gallium arsenide solar battery, has window layer arranged on graphene layer, where graphene layer is provided with anti-reflecting layer i.e. transparent film that is placed away from surface of window layer.
  • 专利号:   CN106784068-A
  • 发明人:   SUN H, JIA R, TAO K, DAI X, JIN Z, LIU X
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   H01L031/0336, H01L031/074, H01L031/18
  • 专利详细信息:   CN106784068-A 31 May 2017 H01L-031/0336 201748 Pages: 10 Chinese
  • 申请详细信息:   CN106784068-A CN11130595 09 Dec 2016
  • 优先权号:   CN11130595

▎ 摘  要

NOVELTY - The battery has a main body provided with a back electrode, a gallium arsenide wafer, a window layer, a heavily doped gallium arsenide cap layer and a front electrode. The heavily-doped gallium arsenide cap layer is provided with a hollow-out area corresponding to position of a positive electrode grid line. A graphene layer is provided with another hollow-out area. The window layer is arranged on the graphene layer. The graphene layer is provided with an anti-reflecting layer i.e. transparent film that is placed away from a surface of the window layer. USE - Graphene/gallium arsenide solar battery. ADVANTAGE - The battery adopts the graphene as transparent conductive material so as to improve power conversion efficiency higher than a Schottky junction solar cell, and is inexpensive, simple to prepare and convenient to apply in industrial application. DETAILED DESCRIPTION - The gallium arsenide epitaxial wafer is single-junction gallium arsenide, double-junction gallium indium phosphor/gallium arsenide and three-junction gallium indium phosphor/gallium arsenide/germanium. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene/gallium arsenide solar battery.