• 专利标题:   Gas sensor manufacturing method, involves doping nitrogen in graphene and coating graphene on micro-heater which is installed at substrate.
  • 专利号:   KR2018095463-A
  • 发明人:   MAENG S L, LEE J K
  • 专利权人:   UNIV WOOSONG
  • 国际专利分类:   G01N027/12, G01N027/414, G01N033/00, H01L041/39
  • 专利详细信息:   KR2018095463-A 27 Aug 2018 G01N-027/414 201867 Pages: 12
  • 申请详细信息:   KR2018095463-A KR018231 14 Feb 2018
  • 优先权号:   KR021440

▎ 摘  要

NOVELTY - The method involves forming the graphene and the nitrogen is doped (S110) in the graphene. A micro-heater which is installed at the substrate is coated (S120) with the graphene. The carbon is filled with the dopant such as graphite, catalyst, and nitrogen. The mixing gas is injected into a chamber. The discharge is caused within the chamber and the carbon is evaporated. USE - Gas sensor manufacturing method. ADVANTAGE - The nitrogen dioxide is manufactured through the gas sensor and the nitrogen is doped in the micro heater is coated with graphene does not react with ammonia. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating gas sensor manufacturing method. (Drawing includes non-English language text) Step for doping nitrogen (S110) Step for coating substrate (S120)