▎ 摘　　要

NOVELTY - The spintronic transistor device (700) has a detector portion (712) that is arranged on a portion of a graphene/carbon nanotube channel portion. The detector portion is comprised of a ferromagnetic insulator layer arranged on the channel portion and a non-magnetic metallic electrode layer arranged on ferromagnetic insulator layer. An exchange gate portion (710) is arranged on a portion of the channel portion, and includes a ferromagnetic insulator layer (714) which is arranged on the graphene channel portion and a gate electrode layer (716) which is arranged on the insulator layer. USE - Spintronic transistor device and electronic device. ADVANTAGE - The high throughput deposition of metallic and non-metallic materials can be deposited on a layer of graphene material without appreciably damaging the underlying graphene material. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the spintronic-transistor device. Spintronic transistor device (700) Exchange gate portion (710) Detector portion (712) Ferromagnetic insulator layer (714) Gate electrode layer (716)