• 专利标题:   System used for semiconductor, electrical devices and diode comprises graphene layer which is prepared on metallic surface of metallic piece formed by transition metal 5d or combination.
  • 专利号:   WO2016124803-A1, ES2578997-B2, ES2578997-A1
  • 发明人:   CALLEJA MITJA F, LERET GARCIA S, NAVARRO OCANA J J, STRADI D, BLACK MOROCOIMA A, BERNARDO GAVITO R, GARNICA ALONSO M, GRANADOS RUIZ D, LOPEZ VAZQUEZ DE PARGA A, PEREZ ALVAREZ E, MIRANDA SORIANO R, MITJA F, GARCIA S, OCANA J J, MOROCOIMA A, GAVITO R, ALONSO M, RUIZ D, VAZQUEZ DE PARGA A, ALVAREZ E, SORIANO R
  • 专利权人:   FUNDACION IMDEA NANOCIENCIA, UNIV AUTONOMA MADRID, UNIV AUTONOMA MADRID
  • 国际专利分类:   C01B031/04, H01L021/20, H01L031/028
  • 专利详细信息:   WO2016124803-A1 11 Aug 2016 C01B-031/04 201656 Pages: 38 Spanish
  • 申请详细信息:   WO2016124803-A1 WOES070059 02 Feb 2016
  • 优先权号:   ES030126

▎ 摘  要

NOVELTY - System comprises graphene layer which is prepared on metallic surface of metallic piece formed by transition metal 5d or combination of transition metals 5d in which graphene layer has moire superstructure and covalently bonded to carbon atoms of alkyl derivatives. USE - System used for semiconductor, electrical devices and diode (all claimed). ADVANTAGE - Electrical properties of graphene can be modified of controlled form. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) production of system which involves cleaning of metallic surface of metallic piece formed by transition metal 5d or combination of metals in conditions of extreme high vacuum, growing graphene layer on obtained metallic surface in stage from precursor of carbon atoms, and exhibiting surface of graphene layer in stage to radicals of alkyl derivatives; and (2) use of graphene layer.