▎ 摘　　要

NOVELTY - The device comprises a chamber with a space for processing a substrate, a substrate support placed within the chamber for supporting the substrate, a unit for supplying a carbon source gas into the chamber, a light source arranged within the chamber, and a unit for focusing light from the light source onto a local position on the substrate and performing the local thermal process, where the substrate moves within the chamber. The light source is a linear lamp. The focusing unit has an ellipse reflecting body for reflecting the irradiated light from the lamp on the substrate. USE - The device is useful for producing a graphene (claimed) for a transistor. ADVANTAGE - The device is useful for manufacturing a graphene of the high quality with increased grain size. DETAILED DESCRIPTION - The device comprises a chamber with a space for processing a substrate, a substrate support placed within the chamber for supporting the substrate, a unit for supplying a carbon source gas into the chamber, a light source arranged within the chamber, and a unit for focusing light from the light source onto a local position on the substrate and performing the local thermal process, where the substrate moves within the chamber. The light source is a linear lamp. The focusing unit has an ellipse reflecting body for reflecting the irradiated light from the lamp on the substrate. The lamp unit comprises two identical rectangular lamps. The holder has an accommodating chamber for accepting the lamps. The lamps are sequentially rotated within the holder for successive replacement. A feeding mechanism relatively moves the lamp unit about the substrate. The substrate support includes a heating plate for heating the substrate. A transfer unit with a roller part transfers the formed graphene layer on the substrate on to a target substrate and is connected to the chamber. An INDEPENDENT CLAIM is included for a method for producing a graphene.