▎ 摘　　要

NOVELTY - This utility new type claims a GaN base one GSG type ultraviolet detector, relating to the semiconductor device technology field. From low to up comprise substrate, AlN buffering layer and GaN layer, set with graphene layer on a GaN layer, the graphene layer include first, second, third, fourth, fifth and sixth graphene, first and second graphite layer and is T-shaped distribute, second and third layer graphene, the graphene layer by third parallel and uniform distribute a 2-100 a strip-shaped graphite, fourth and fifth graphite layer and is inverted T type distribute, fifth and sixth layer graphene, the graphene layer by the sixth 2-100 a strip-shaped graphene parallel and uniform distribute a, third and the sixth are graphene; a first and fourth graphene layer set with first and second ohm contact electrode down-lead. This utility new type with the conventional MSM type of ultraviolet detector, ultraviolet light can increase the actual irradiation area and increasing the detector response.