▎ 摘　　要

NOVELTY - Preparation of silicon-based germanium-doped graphene composite material involves placing silicon substrate/graphene in growth chamber, placing silicon buffer layer having thickness of 30-50 nm between silicon substrate and graphene, depositing germanium at 200-800 degrees C and annealing for 0-30 minutes. USE - Preparation of silicon-based germanium-doped graphene composite material used in microelectronic devices, solar cells and infrared detection applications. ADVANTAGE - The method enables simple preparation of silicon-based germanium-doped graphene composite material with high carrier concentration and mobility.