▎ 摘　　要

NOVELTY - The semiconductor device has a main portion that is formed with a silicon (001) substrate (202). A graphene layer is provided on the silicon (001) substrate. The graphene layer is synthesized without a metallic catalyst. A gallium nitride-based layer is provided over the graphene layer. The graphene layer is exposed by vaporizing (224) a nickel carbide layer (212). A gallium nitride layer is synthesized on the graphene layer which is applied with nitrogen. The graphene layer is treated with ammonia. USE - Semiconductor device for power switching device, and LED-based and laser-based devices used in TV display, cellular phone display, tablet, personal digital assistant, hand held device, projection system, watch and smart watch. ADVANTAGE - The gallium nitride layer is grown efficiently on silicon. The performance of semiconductor device is improved. The fabrication of high crystalline quality is enabled. The film stress and growth rate are monitored in real-time. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for growing gallium nitride layer on silicon. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor device. Silicon substrate (202) Nickel layer (206) Carbon layer (208) Nickel carbide layer (212) Step for vaporizing nickel carbide layer (224)