▎ 摘　　要

NOVELTY - A copper alloy is ultrasonically cleaned with hydrochloric acid solution, acetone and ethanol sequentially for 10 minutes, dried, and the resultant copper alloy is placed in a chemical vapor deposition device. The pressure inside the chemical vapor deposition device is maintained under pressure of 0.1-90 Torr, temperature of the copper alloy substrate is decreased to 450-500 degrees C, and hydrogen gas and helium gas are introduced. The copper alloy substrate in the device is cooled, the copper alloy substrate and sample are discharged, and mechanical method is used to obtain graphene. USE - Preparation of graphene (claimed). ADVANTAGE - The method economically provides graphene with high purity, quality and light transmittance, by a simple process. DETAILED DESCRIPTION - A copper alloy is Ultrasonically cleaned with hydrochloric acid solution, acetone and ethanol, sequentially for 10 minutes, dried under nitrogen atmosphere, the resultant copper alloy is placed in parallel in a chemical vapor deposition device, and evacuated under vacuum pressure of less than 1 mTorr. The copper alloy in the chemical vapor deposition device is increased at 800-980 degrees C for 40-55 minutes, hydrogen is introduced from the bottom of the chemical vapor deposition device at 1-900 sccm, the pressure is maintained at 0.1-90 Torr and the oxide film on the copper alloy surface is removed. The pressure inside the chemical vapor deposition device is maintained at 0.1-90 Torr, temperature of the copper alloy substrate is maintained to 800-980 degrees C, hydrogen gas and methane gas in gas flow rate of 1-1:10 is introduced and continuous ventilation is carried out for 50-70 minutes. The pressure inside the chemical vapor deposition device is maintained under pressure of 0.1-90 Torr, temperature of the copper alloy substrate is decreased to 450-500 degrees C for 200-380 minutes, hydrogen gas and helium gas are introduced in flow rate of 1 to 1:10 for 40-100 minutes, introduction of hydrogen gas is terminated, and helium gas is continuously introduced at 100-650 sccm. The resultant copper alloy substrate in the chemical vapor deposition device is cooled, the copper alloy substrate and sample are discharged, and mechanical method is used to obtain graphene.