▎ 摘　　要

NOVELTY - The method involves depositing gate and drain material (104,110) in recess of a substrate (102). The gate material, drain metal, and substrate are planarized. Sidewalls are formed by depositing material on substrate around gate material. A flexible conductive element is formed between the sidewalls to establish gap between the flexible conductive element and the gate material. The gap is sized to create a negative threshold voltage at the gate material for opening a circuit. A source terminal is formed in electrical contact with the flexible conductive element. USE - Method for forming non-volatile nano-mechanical switch e.g. graphene-based electromechanical switch, used in fabrication of integrated circuit chip. ADVANTAGE - The gap between the gate and the graphene is smaller, so that both voltage thresholds can be moved down with the decreasing threshold where the gate voltage is turned off. Thus non-volatility can be provided and the state of the switch can be maintained without expending additional energy. DESCRIPTION OF DRAWING(S) - The drawings show the cross-sectional views of the non-volatile grapheme switch in open state and closed state. Substrate (102) Gate (104) Graphene layer (106) Source contact (108) Drain (110)