▎ 摘　　要

NOVELTY - Method for forming a graphene layer, involves exposing a substrate comprising one or more of a conductive material and a dielectric material to a first plasma to clean the conductive material, where the first plasma is formed from an argon-hydrogen containing gas, exposing the substrate to a second plasma to form a graphene layer on the substrate, where the second plasma comprises argon, hydrocarbon, and hydrogen radicals, and cooling the substrate to a temperature ≤ 100° C at a controlled rate. The second plasma is a microwave plasma. USE - The method is useful for forming a graphene layer as a replacement for metal barrier layers in semiconductor devices, and in flexible electronics, e.g. smart watch applications. ADVANTAGE - The method is capable of depositing or forming graphene layer with high quality and low cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a processing tool comprising a central transfer station comprising a robot configured to move a wafer, process stations, where each process station connected to the central transfer station and provides a processing region separated from processing regions of adjacent process stations, the process stations comprises a pre-cleaning chamber, a graphene deposition chamber, and a cooling chamber, and a controller connected to the central transfer station and the process stations, where the controller is configured to activate the robot to move the wafer between process stations, and to control a process occurring in each of the process stations.