▎ 摘　　要

NOVELTY - Method of growing graphene by chemical vapor deposition involves loading at least one insulating substrate in a furnace, introducing a reaction gas containing an oxygen-containing carbon source into the furnace, heating the reaction gas and UV-irradiating the reaction gas with a UV source to decompose oxygen-containing carbon source and depositing a graphene film on a surface of the at least one insulating substrate. USE - Method for growing graphene used in biomedical applications,, electronic device and optoelectronic devices. ADVANTAGE - The method produces high crystallinity graphene layer. The decomposition of the carbon source at high temperature achieves nearly 100% monolayer coverage. The wet (acid) etching for a metal substrate and a polymer scaffold-aid transfer of the graphene film can be avoided.