▎ 摘　　要

NOVELTY - Method for doping support layer-based graphene involves growing (210) graphene on a metal catalyst layer, forming a support layer comprising a dielectric material on the grown graphene, injecting (220) a dopant into the graphene having the support layer, transferring (230) the ion injected graphene to a substrate, and performing a heat-treatment process (240) on the transferred graphene. USE - Method for doping support layer-based graphene used for electrical and electronic components. ADVANTAGE - The method enables uniform doping of support layer-based graphene with reduced generation of damage and controlled amount of dopant ions. DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart for doping support layer-based graphene. Growth of graphene on metal catalyst layer (210) Injection of dopant into graphene (220) Transfer of ion injected graphene to substrate (230) Heat-treatment process (240)