▎ 摘　　要

NOVELTY - The method involves dipping a graphene substrate in graphene oxide. A rear etching part of the graphene substrate is washed by washing liquid. The washing liquid is removed from the graphene substrate. Impurities and pollutant are removed from the graphene substrate by graphite dilute during washing process. The graphene substrate is repeatedly washed until the graphene substrate is completely etched. The washing liquid is contained with ammonium sulfate solution, ethanol, inorganic solution, aqueous solution, alcohol solution, ketone solution, ester solution or organic salt. USE - Growth graphene substrate etching method. ADVANTAGE - The method enables removing the impurities from the graphene substrate in an easiest manner so as to avoid contamination, thus ensuring better substrate performance. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a growth graphene substrate etching method.'(Drawing includes non-English language text)'