• 专利标题:   Dual-pulse femtosecond laser deposition of ultra-high frequency response super capacitors, involves processing carbon-based precursor thin film material by femtosecond laser one-step method, depositing and preparing porous carbon electrode.
  • 专利号:   CN113314357-A
  • 发明人:   JIANG L, ZHANG Z, LI X, ZHANG X, XU C
  • 专利权人:   BEIJING INST TECHNOLOGY
  • 国际专利分类:   B23K026/00, H01G011/32, H01G011/44, H01G011/86
  • 专利详细信息:   CN113314357-A 27 Aug 2021 H01G-011/86 202193 Pages: 7 Chinese
  • 申请详细信息:   CN113314357-A CN10581968 24 May 2021
  • 优先权号:   CN10581968

▎ 摘  要

NOVELTY - Dual-pulse femtosecond laser deposition of ultra-high frequency response super capacitors, involves processing a carbon-based precursor thin film material by a femtosecond laser one-step method and transferring in situ. A porous carbon electrode is deposited and prepared. The electrode is used for preparing an ultra-high frequency response super capacitor. The carbon-based precursor thin film material is processed by the femtosecond laser one-step method. USE - Method for depositing ultra-high frequency response super capacitor by double-pulse femtosecond laser. ADVANTAGE - The method enables processing carbon material by double-pulse femtosecond has rich and uniform hole diameter distribution and high specific surface area, the pulse laser transfers and deposits the carbon material from bottom to top, so that the stack of the electrode material is in order and uniform.