▎ 摘　　要

NOVELTY - Modification method of graphene thin film, involves (a) contacting metal ion solution with graphene thin film, forming metal substrate, drying graphene thin film and metal substrate, forming metal substrate and modification of graphene thin film, (b) forming organic layer on the graphene film, (c) removing the metallic substrate using an etching solution to obtain organic layer and modified graphene combination, and (d) removing organic layer to obtain modified graphene film. USE - The method is useful for modification of graphene thin film (claimed). ADVANTAGE - The method has high repeatability and simple operation, and increases electrical property of the graphene thin film.