▎ 摘　　要

NOVELTY - Preparing mesoporous silica nanohemisphere material comprises (i) dissolving a surfactant and a catalyst in water, stirring to a clear solution, adding graphene substrate to the clear solution, ultrasonically dispersing, stirring to obtain a black solution, dissolving a silicon source in an organic solvent to obtain an organic solution, where the concentration of the silicon source is 2.5-45 wt.%, adding the organic solution to the black solution to obtain an upper oil phase to obtain a two-phase layered system, where the mass ratio of the graphene to the silicon source is 0.001-0.1 and the mass ratio of the surfactant to the silicon source is 0.5-6.0, (ii) reacting the two-phase layered system at 40-80 degrees C and obtaining a mesoporous hemisphere grown on the graphene substrate and (iii) heating the mesoporous hemisphere grown on the graphene substrate from room temperature to 400-800 degrees C in an air atmosphere and removing the surfactant and the graphene substrate for 3-12 hours. USE - The method is useful for preparing mesoporous silica nanohemisphere material. DETAILED DESCRIPTION - Preparing mesoporous silica nanohemisphere material comprises (i) dissolving a surfactant and a catalyst in water, and stirring to a clear solution, where the concentration of the surfactant in the clear solution is 0.5-20 wt.%, adding graphene substrate to the clear solution, ultrasonically dispersing, stirring to obtain a black solution, dissolving a silicon source in an organic solvent to obtain an organic solution, where the concentration of the silicon source is 2.5-45 wt.%, adding the organic solution to the black solution to obtain an upper oil phase to obtain a two-phase layered system, where the mass ratio of the graphene to the silicon source is 0.001-0.1 and the mass ratio of the surfactant to the silicon source is 0.5-6.0, (ii) reacting the two-phase layered system at 40-80 degrees C and obtaining a mesoporous hemisphere grown on the graphene substrate and (iii) heating the mesoporous hemisphere grown on the graphene substrate from room temperature to 400-800 degrees C in an air atmosphere and removing the surfactant and the graphene substrate for 3-12 hours