▎ 摘　　要

NOVELTY - The method involves providing (S10) a substrate. A graphene layer is formed on a surface of the substrate. A spacer layer is formed (S20) on the surface of the graphene layer away from the substrate. A mixed layer is formed (S30) on the surface of the spacer layer far away from the graphene layer. The mixed layer is provided with F4TCNQ and ZEP 520. The carrier control is carried out (S40) to the graphene layer through the spacer layer and the mixed layer. The graphene layer is provided with a graphene quantum Hall device. USE - Method for controlling graphene carrier of graphene quantum Hall device (claimed). ADVANTAGE - The method reduces charge density to improve conductivity and carrier mobility of the material, and has good stability and controllability. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram of the process structure in the graphene carrier control method. Step for providing a substrate (S10) Step for forming spacer layer on the surface of the graphene layer away from the substrate (S20) Step for forming mixed layer on the surface of the spacer layer far away from the graphene layer (S30) Step for carrying out carrier control to the graphene layer through the spacer layer and the mixed layer (S40)