• 专利标题:   Graphene or boron nitride heterogeneous structure pressure sensor, has shell for covering silicon/silicon dioxide substrate layer and heterogeneous structure pressure-sensing layer, where silicon substrate layer provided with electrode.
  • 专利号:   CN107748025-A, CN107748025-B
  • 发明人:   CHENG X, DAI Y, FANG Z, LIU G, LIU Y, LV K, QIU J, YANG P, ZHANG Y
  • 专利权人:   UNIV NAT DEFENSE TECHNOLOGY, UNIV NAT DEFENSE TECHNOLOGY
  • 国际专利分类:   G01L001/20
  • 专利详细信息:   CN107748025-A 02 Mar 2018 G01L-001/20 201820 Pages: 9 Chinese
  • 申请详细信息:   CN107748025-A CN10938254 30 Sep 2017
  • 优先权号:   CN10938254

▎ 摘  要

NOVELTY - The sensor has a silicon/silicon oxide substrate layer provided with a titanium electrode. A silicon/silicon dioxide substrate layer is etched on an upper surface of a cavity. The silicon/silicon dioxide substrate is bonded to an upper surface of the substrate. A lower surface of the substrate is connected to an upper surface of a tube seat. A lower end of the titanium electrode is connected with an external testing circuit. A shell covers the silicon/silicon dioxide substrate layer and graphene/boron nitride heterogeneous structure pressure-sensing layer. USE - Graphene or boron nitride heterogeneous structure pressure sensor. ADVANTAGE - The sensor has low manufacturing cost, better linearity, high rate of finished products, high sensitivity and better stability, and prolongs service life. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a graphene or boron nitride heterogeneous structure pressure sensor.