• 专利标题:   Preparation of nitrogen-doped graphene by ion beam by using polyvinylidene fluoride for gelatinization of graphene oxide, using brush to dip in sample and coat on stainless steel sample table, and starting ion beam device.
  • 专利号:   CN111620327-A
  • 发明人:   XIE J
  • 专利权人:   GUANGZHOU JIAPENG TECHNOLOGY CO LTD
  • 国际专利分类:   C01B032/19, H01M010/04, H01M010/0525, H01M004/587
  • 专利详细信息:   CN111620327-A 04 Sep 2020 C01B-032/19 202081 Pages: 9 Chinese
  • 申请详细信息:   CN111620327-A CN10659305 09 Jul 2020
  • 优先权号:   CN10659305

▎ 摘  要

NOVELTY - Preparation of nitrogen-doped graphene by ion beam comprises preparation of graphene oxide by using ice bath for stirring mixture of graphite and concentrated sulfuric acid to fully mix, adding potassium permanganate, fully stirring under ice bath, water bath stirring, adding hydrogen peroxide, fully stirring, adding deionized water and hydrochloric acid, centrifuging the sample, repeatedly obtaining graphite oxide, putting into ultrasonic instrument for ultrasonic treatment, and obtaining graphene oxide; and ion beam processing graphene oxide to prepare nitrogen-doped graphene by using polyvinylidene fluoride for gelatinization of graphene oxide, using brush to dip in sample and uniformly coat on stainless steel sample table, ensuring the thickness of coated sample at 10-50 mu m, starting the ion beam device, vacuumizing the device, and injecting ammonia (NH3) in vacuum chamber. USE - The method is for preparation of nitrogen-doped graphene used for preparing button lithium battery and in the fields of supercapacitor, electrochemical catalysis and ion adsorbent (all claimed). The nitrogen-doped graphene is used as raw material to prepare lithium ion cathode material useful for lithium ion battery. ADVANTAGE - The nitrogen-doped graphene has good conductivity and higher nitrogen doping success rate than the traditional chemical vapor deposition method, because it has few layers (1-3 layers) and low oxygen (O)/carbon (C) ratio. It uses ion beam treatment, which has high-efficiency ion injection and is clean and pollution-free. The graphene oxide after ion beam treatment becomes nitrogen-doped graphene with excellent electrochemical performance. DETAILED DESCRIPTION - Preparation of nitrogen-doped graphene by ion beam comprises preparation of graphene oxide by using ice bath for stirring mixture of graphite and concentrated sulfuric acid to fully mix, adding potassium permanganate, fully stirring under ice bath, water bath stirring, adding hydrogen peroxide, fully stirring, adding deionized water and hydrochloric acid, centrifuging the sample, repeatedly obtaining graphite oxide, putting into ultrasonic instrument for ultrasonic treatment, and obtaining graphene oxide; and ion beam processing graphene oxide to prepare nitrogen-doped graphene by using polyvinylidene fluoride for gelatinization of graphene oxide, using brush to dip in sample and uniformly coat on stainless steel sample table with diameter of 2-4 cm, ensuring the thickness of coated sample at 10-50 mu m, starting the ion beam device, vacuumizing the device, injecting NH3 in vacuum chamber, after reaching a certain vacuum degree, carrying out nitrogen ion (N+) irradiation, dissolving the product in dimethyl formamide (DMF) organic solvent, carrying out uniform ultrasonic dispersion, centrifuging for 15 minutes at 1100 revolutions/minute (rpm), taking the supernatant in a vacuum drying box at 60 degrees C for 12 hours, and finally obtaining nitrogen-doped graphene.