▎ 摘　　要

NOVELTY - Forming thin graphene film involves heating graphene growth substrate (4) in high temperature area; perpendicular to substrate and deposited along substrate normal direction of graphene film surface, sequentially applying accelerating electric field and screening electric field in positive electrode substrate; heating substrate, screening area and accelerating electric field area; introducing carbonaceous gas into plasma ionization; and screening negatively charged ions, where charged amount of carbon ions are different, and under impact of electric field accelerating growth of graphene. USE - For forming thin graphene film (claimed). ADVANTAGE - The present method produces thin graphene film with improved quality and efficiency of vapor deposition of graphene. DETAILED DESCRIPTION - Preparation of thin graphene film involves: providing graphene growth substrate (4), heating the substrate in a high temperature area at 500-1000 degrees C; perpendicular to the substrate and deposited along the substrate normal direction of graphene film surface, sequentially applying accelerating electric field and screening electric field in positive electrode substrate; heating the substrate, screening area and accelerating electric field area; introducing carbon-containing gas as carbon source, under controlled temperature, air pressure and/or heating frequency of power supply the carbon-containing gas, into plasma ionization; and screening negatively charged ions under the action of electric field screening, where charged amount of carbon ions are different, and under impact of electric field accelerating growth of graphene. An INDEPENDENT CLAIM is included for a device used for preparation of graphene thin film comprising working chamber (12) including carbon source inlet (1), a residual gas outlet (8), substrate, upper screening electric field pole plate (5), first screening electric field electrode, second lower screening electric field electrode, accelerating electric field polar plate (7), accelerating electric field pole plate, first accelerating electric field electrode (9), second accelerating electric field electrode (10), and a movable heating plate (11). The first and second screening electric field electrode is set on a two carbon source side inlet of pole plate forming screening area. The first and second accelerating electric field electrodes are disposed on both sides of residual gas outlet; and are connected to lower plate of accelerating field. The substrate is placed on the movable heating plate. The movable heating plate is heated by accelerating electric field. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a device used for preparation of graphene thin film. Carbon source inlet (1) Graphene growth substrate (4) Upper screening electric field pole plate (5) Accelerating electric field polar plate (7) Residual gas outlet (8) Accelerating electric field electrodes (9, 10) Movable plate (11) Working chamber (12)