• 专利标题:   FET, has channel layer formed on inorganic material and connected electrically with source electrode, and drain electrode formed in side of inorganic material, where source electrode and drain electrode are provided with graphene.
  • 专利号:   KR2013027199-A, KR1275282-B1
  • 发明人:   LEE H, YOO H
  • 专利权人:   UNIV RES BUSINESS FOUND SUNGKYUNKWAN, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   H01L021/336, H01L029/78
  • 专利详细信息:   KR2013027199-A 15 Mar 2013 H01L-029/78 201325 Pages: 39
  • 申请详细信息:   KR2013027199-A KR090645 07 Sep 2011
  • 优先权号:   KR090645

▎ 摘  要

NOVELTY - The FET has a channel layer formed on an inorganic material and connected electrically with a source electrode. A drain electrode is formed in a side of the inorganic material. The source electrode and the drain electrode are provided with graphene. The inorganic material is made of metal oxide, metal sulfide and nano particle of metal halide, where size of the inorganic material is 1-100 nanometers. The inorganic material is provided with an optical activity function. USE - FET. ADVANTAGE - The FET has excellent charge transfer effect, stable N-doping characteristic and better electrical characteristic. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a FET manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a FET.