▎ 摘　　要

NOVELTY - Non-flashing quantum dots comprise core body, inner shell layer which is coated on surface of the core body, and outer shell layer which is coated on a surface of inner shell layer. The core body is cadmium selenide (CdSe) or cadmium zinc selenide (CdmZn1-mSe, where m is 0-1). The inner shell layer is made of zinc selenide (ZnSe), and the outer shell layer is made of zinc oxide (ZnO). USE - Non-flashing quantum dots used for quantum dot light emitting diode (claimed). ADVANTAGE - The non-flashing quantum dot is capable of satisfying application conditions in the lighting field. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) manufacturing non-flashing quantum dots which involves providing a dispersion of a core body material, a dispersion of an inner shell layer material source and a dispersion of an outer shell layer material source, where the core body material is cadmium selenide or cadmium zinc selenide; the inner shell layer material source is a mixture of a zinc source and a selenium source; the outer shell layer material source is a mixture of a zinc source and a sulfur source or a zinc oxygen source; under anoxic conditions, the dispersion of the inner shell layer material source is added dropwise to the dispersion of the core material at a rate of 1-20 mL/h, and the inner shell layer material is grown in situ on the surface of the core material, where the intermediate includes a core body and an inner shell layer coated on the surface of the core body; in anoxic conditions, the dispersion of the outer shell layer material source is added dropwise to the dispersion of the intermediate at a rate of 1-20 mL/h, and the outer shell layer material is grown in situ on the surface of the intermediate to obtain non-flashing quantum dots; and (2) quantum dot light emitting diode comprising base, lower electrode, hole injection layer, hole transport layer, non-flashing quantum dot light emitting layer, electron transport layer and upper electrode stacked sequentially; or a base, a lower electrode, an electron transport layer, a non-flickering quantum dot light emitting layer, a hole transport layer, a hole injection layer, and an upper electrode stacked sequentially; where the non-flashing quantum dot light emitting layer is made of non-flashing quantum dots.