▎ 摘　　要

NOVELTY - A silicon film (10) is formed on an insulating layer and carbonized with hydrocarbon gas. Then, the silicon film is modified into silicon carbide film (13), and a graphene film (14) is formed on the obtained silicon carbide film. USE - Formation of graphene film used for substrate (claimed) and wiring material for electronic device. ADVANTAGE - The method efficiently and economically provides high quality graphene film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for substrate, which is obtained by forming silicon carbide film having the graphene film on the surface of insulating layer. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view illustrating carbonization process of silicon film. Silicon film (10) Silica layer (11) Silicon substrate (12) Silicon carbide film (13) Graphene film (14)