• 专利标题:   High sensitive infrared spectrum sensor, has each infrared light sensor unit whose surface is covered with infrared light filtration film single sheet, and second substrate and electrode array layer located on second substrate.
  • 专利号:   CN115165782-A
  • 发明人:   CHEN H, HUANG B, CHEN R, ZHANG H, CHENG C
  • 专利权人:   INST SEMICONDUCTORS CHINESE ACAD SCI
  • 国际专利分类:   G01J003/02, G01J003/28, G01N021/01, G01N021/35
  • 专利详细信息:   CN115165782-A 11 Oct 2022 G01N-021/35 202286 Chinese
  • 申请详细信息:   CN115165782-A CN10640679 07 Jun 2022
  • 优先权号:   CN10640679

▎ 摘  要

NOVELTY - The sensor has multiple infrared light sensor units (1) arranged in an integrated array. Multiple infrared light filtration film single chips are arranged in the array. A surface of each infrared light sensor unit is covered with an infrared light filtration film single sheet (2), where infrared transmission spectrum of the infrared light filtration sheet single sheet are different. A first substrate is formed with an electrode array layer. An upper surface of the electrode array layer is exposed. A second substrate and an electrode array layer are located on the second substrate. A graphene array layer is located on the electrode array layer. USE - High sensitive infrared spectrum sensor. ADVANTAGE - The sensor has no light splitting system, low cost and portable infrared spectrometer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a high sensitive infrared spectrum sensor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a high sensitive infrared spectrum sensor in partial section. 1Infrared light sensor units 2Infrared light filtration film single sheet