• 专利标题:   Three-dimensional non-catalytic substrate-loading graphene film structure used for e.g. microelectromechanical system device comprises non-catalytic substrate, etched surface body three-dimensional structure and graphene thin film cover.
  • 专利号:   CN105296958-A, CN105296958-B
  • 发明人:   DU C, SHEN J, SHI H, YANG J, WEI D, YU C, SONG X, YU Y
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL, CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   C23C016/26, C30B028/14, C30B029/02
  • 专利详细信息:   CN105296958-A 03 Feb 2016 C23C-016/26 201637 Pages: 10 English
  • 申请详细信息:   CN105296958-A CN10762946 10 Nov 2015
  • 优先权号:   CN10762946

▎ 摘  要

NOVELTY - A three-dimensional non-catalytic substrate-loading graphene film structure comprises non-catalytic substrate body (1), etched surface body three-dimensional structure (2), and graphene thin film cover (3). USE - Three-dimensional non-catalytic substrate-loading graphene film structure used for photoelectric device, microelectromechanical system device and nano-device. ADVANTAGE - The structure has simple operation, short manufacturing period and low manufacturing cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of three-dimensional non-catalytic substrate-loading graphene thin film structure comprising photoetching, ion etching or wet etching substrate, washing, cleaning, drying, setting to cavity of plasma enhanced chemical vapor deposition device, discharging air, filling protective gas, pumping vacuum, heating to 500-650 degrees C, counter-filling carbon source gas, opening plasma enhancing source, maintaining air pressure at 1-10 Pa, directly growing graphene thin film for 60-120 minutes, immediately closing plasma enhancing source, cooling to 10-30 degrees C and taking out. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of three-dimensional non-catalytic substrate-loading graphene film structure. Non-catalytic substrate body (1) Etched surface body three-dimensional structure (2) Graphene thin film cover (3)