• 专利标题:   Nitrogen-doped graphene quantum dot/grapheme-based super capacitor electrode material, comprises foam nickel as substrate and graphene and graphene quantum dots loaded on foam nickel.
  • 专利号:   CN108364800-A
  • 发明人:   CHEN A, ZHANG T, JIANG B, WANG K, WANG X
  • 专利权人:   UNIV SHANGHAI SCI TECHNOLOGY
  • 国际专利分类:   H01G011/26, H01G011/30, H01G011/32, H01G011/36, H01G011/86
  • 专利详细信息:   CN108364800-A 03 Aug 2018 H01G-011/32 201857 Pages: 9 Chinese
  • 申请详细信息:   CN108364800-A CN10058685 22 Jan 2018
  • 优先权号:   CN10058685

▎ 摘  要

NOVELTY - A nitrogen-doped graphene quantum dot/grapheme-based super capacitor electrode material comprises foam nickel as the substrate and graphene and graphene quantum dots loaded on the foam nickel. USE - Nitrogen-doped graphene quantum dot/grapheme-based super capacitor electrode material. ADVANTAGE - The nitrogen-doped graphene quantum dot/grapheme-based super capacitor electrode material can be prepared with high specific energy and stable working window, and high stability and high power in power supply occasion. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing nitrogen-doped graphene quantum dot/grapheme-based super capacitor electrode material.