▎ 摘　　要

NOVELTY - The device has an insulation film (16) that is formed on a graphene interconnect. A via conducting portion (20) is formed in via hole that is provided in interconnect and the insulation film. The bottom of via hole is positioned deeper and shallower than a bottom of the interconnect. An underlying film (12) is formed beneath interconnect, such that via hole is extended into the underlying film. The region containing the impurity contains one element selected from phosphorus, nitrogen, arsenic, antimony, bismuth, fluorine, chlorine, bromine, iodine, astatine, hydrogen and boron. USE - Semiconductor device. ADVANTAGE - The contact area between the graphene interconnect and via conducting portion are increased, and thus reduces the contact resistance between interconnect and via conducting portion. The ballistic conduction is reliably maintained in the lower region of the graphene interconnect. The conductance based on normal conduction is increased with the ballistic conduction maintained at the edges of interconnect, such that the interconnect resistance can be effectively reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view iilustrating the semiconductor device manufacturing method. Underlying region (10) Underlying film (12) Insulation film (16) Via conducting portion (20) Upper layer interconnect (22)