• 专利标题:   SWAP gate based Graphene surface plasma excimer, has first straight wave-guide whose right end is connected with first output end of SWAP gate, and second straight wave-guide whose right end is connected with second output end of SWAP gate.
  • 专利号:   CN111240124-A
  • 发明人:   CHEN W, DING J, WANG P, LI Y, LI J, YU R, YANG J
  • 专利权人:   UNIV NINGBO
  • 国际专利分类:   G02B006/122, G02F003/00
  • 专利详细信息:   CN111240124-A 05 Jun 2020 G02F-003/00 202052 Pages: 28 Chinese
  • 申请详细信息:   CN111240124-A CN10057246 17 Jan 2020
  • 优先权号:   CN10057246

▎ 摘  要

NOVELTY - The excimer has a buffer layer paved on a substrate to completely cover an upper surface of the substrate. A first straight wave-guide is located on a front side of a second straight wave-guide. Four micro-ring resonant cavities are formed on an upper surface of the buffer layer. A center of a first micro-ring resonator is connected to a center of a second micro-ring resonator. A left end of the second straight wave-guide is connected to a right end of a first arc wave-guide. A rear end of the first arc wave-guide is connected to a front end of a second arc wave-guide. A right end of the second straight wave-guide is connected with a first output end of a SWAP gate. A right end of a third straight wave-guide is connected with a second output end of the SWAP gate. USE - SWAP gate based Graphene surface plasma excimer. ADVANTAGE - The excimer has better graphene surface plasmonSWAP gate function, small size, compact structure and strong resistance. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a SWAP gate based Graphene surface plasma excimer.