• 专利标题:   Working electrode single-layer graphene nano-particle detecting device, has reaction chamber whose bottom surface is provided with silicon wafer, which is fixed with single graphite layer of working electrode.
  • 专利号:   CN103424447-A, CN103424447-B
  • 发明人:   JIN Q, ZHANG H, ZHAO J, JIN B, MAO H
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   G01N027/30, G01N027/48
  • 专利详细信息:   CN103424447-A 04 Dec 2013 G01N-027/30 201407 Pages: 15 Chinese
  • 申请详细信息:   CN103424447-A CN10371092 22 Aug 2013
  • 优先权号:   CN10371092

▎ 摘  要

NOVELTY - The device has a reaction chamber whose bottom surface is provided with a silicon wafer, which is fixed with a single graphite layer of a working electrode. The working electrode is provided with a pair of electrodes and a reference electrode, where the working electrode is equipped with a three-electrode system. The three-electrode system is provided with a magnet, which is located on a silicon chip, and the pair of electrodes and the reference electrode are located on the silicon wafer. USE - Working electrode single-layer graphene nano-particle detecting device. ADVANTAGE - The device realizes high speed conduction electrons by modifying nano-gold and magnetic beads so as to amplify a signal and realize high sensitivity nano-particle detection. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for detecting single-layer graphene nano-particle of a working electrode (2) a kit. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical illustration of a method for detecting a single-layer graphene nano-particle of a working electrode.