• 专利标题:   Preparation method of graphene-ceramic composite material, involves providing radiating ceramic substrate, introducing carbon source, and performing plasma chemical vapor deposition reaction on radiating ceramic substrate to grow graphene layer.
  • 专利号:   CN113461439-A
  • 发明人:   ZHANG Y, SHAN J, LIU Z
  • 专利权人:   UNIV PEKING, BEIJING GRAPHENE INST
  • 国际专利分类:   H01L041/04, C01B032/186, C04B041/85
  • 专利详细信息:   CN113461439-A 01 Oct 2021 C04B-041/85 202210 Chinese
  • 申请详细信息:   CN113461439-A CN10235103 30 Mar 2020
  • 优先权号:   CN10235103

▎ 摘  要

NOVELTY - The method involves providing (S110) a heat dissipation ceramic substrate, introducing (S120) a carbon source, and performing plasma chemical vapor deposition reaction on the heat-displacing ceramic substrate to grow a graphene layer, where the graphene layer is vertically oriented. The plasma chemical vapor deposition reaction temperature is set between 500 degrees centigrade and 700 degrees centigrade, and the reaction time is between 1h and 6h. The ultrasonic cleaning and drying treatment are performed to the radiating ceramic substrate. The radiating ceramic substrate is selected from aluminum oxide, aluminum nitride and silicon carbide. The carbon source is made of hydrocarbon precursor which comprises of acetylene. USE - Preparation method of graphene-ceramic composite material for radiator assembly of transducer (all claimed) used in power ultrasonic and underwater engineering fields. ADVANTAGE - The preparation method can realize the three-dimensional graphene directly and quickly and uniformly growing on the ceramic substrate, without transferring process, avoiding the sample pollution and wrinkle. The graphene-ceramic composite material has good thermal conductivity and heat dissipation efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene-ceramic composite material. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram showing the preparation process of graphene-ceramic composite material. (Drawing includes non-English language text) Step for providing radiating ceramic substrate (S110) Step for introducing carbon source and performing plasma chemical vapor deposition reaction on heat-displacing ceramic substrate (S120)