▎ 摘　　要

NOVELTY - Forming a structure involves forming semiconductor islands on surface of single crystalline semiconductor-carbon alloy layer (10); and annealing the single crystalline semiconductor-carbon alloy layer while a substrate is placed on the semiconductor islands. The surface of the single crystalline semiconductor-carbon alloy layer becomes a vicinal surface during the annealing and where graphene layer including at least one graphene monolayer is formed at the vicinal surface as semiconductor atoms evaporate from the vicinal surface during the annealing. USE - For forming a structure containing graphene layer (claimed) including graphene-based field effect transistor (graphene FET) or other electronic devices. ADVANTAGE - The method of forming contiguous graphene layer having constant orientation over large area of unpitted smooth surface of single crystalline semiconductor-carbon alloy layer. During the initial phase of the anneal, surface diffusion of the semiconductor material proceeds to form vicinal surfaces while graphitization is suppressed because the space between the two semiconductor-carbon alloy layers maintains high vapor pressure of the semiconductor material. Once all semiconductor material is consumed, graphitization occurs in which graphene layers is formed on the vicinal surfaces having atomic level surface flatness. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for structure comprising single crystalline semiconductor-carbon alloy layer having vicinal surface; and graphene layer including at least one graphene monolayer and located on the vicinal surface. DESCRIPTION OF DRAWING(S) - The figure shows vertical cross-sectional view of graphene-based field effect transistor. Single crystalline semiconductor-carbon alloy layer (10) Graphene layer (15) Gate electrode (70) Drain electrode (74) Dielectric material layer (80) Gate electrode (150)