• 专利标题:   Preparation method of reduced graphene oxide (RGO) film, involves reducing graphene oxide thin film using chemical reduction method and pressure-assisted thermal reduction method, respectively, to form reduced graphene oxide film.
  • 专利号:   US2015111039-A1, KR2015079533-A, US9236156-B2, KR1664979-B1
  • 发明人:   KIM S H, JANG J, SHIN K, SHIN K H
  • 专利权人:   SNU R DB FOUND, UNIV SEOUL NAT R DB FOUND, SNU R DB FOUND
  • 国际专利分类:   H01B001/04, H01L051/10, C01B031/04, H01B005/14, C23C016/40, C23C016/50, H01L051/00, H01L051/05, H05H001/24
  • 专利详细信息:   US2015111039-A1 23 Apr 2015 H01B-001/04 201531 Pages: 22 English
  • 申请详细信息:   US2015111039-A1 US220399 20 Mar 2014
  • 优先权号:   KR124405, KR087544

▎ 摘  要

NOVELTY - The preparation method involves coating a graphene oxide-dispersed solution on a substrate to form a graphene oxide thin film. The graphene oxide thin film is reduced using a chemical reduction method and a pressure-assisted thermal reduction method, respectively, to form a reduced graphene oxide film. The plastic substrate includes part selected from the group consisting of polyethersulfone, polyimide, polycarbonate, polyethylene naphthalate, and polyethylene terephthalate. USE - Preparation method of RGO film (claimed). Uses include but not limited to graphene electrode, organic thin film transistor, antistatic film (all claimed). ADVANTAGE - Maintains an excellent antistatic property even after a long period of time since antistatic film has a very low sheet resistance. Exhibits an excellent electrical property caused by a high carbon or oxygen composition ratio and a dense interlayer structure. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram illustrating a preparing method of RGO films.