▎ 摘　　要

NOVELTY - A graphene film manufacturing apparatus (10) consists of gas supply system (21) for supplying film-forming material gas containing carbon, stage electrode (16) for supporting a base material (F), counter electrode (20) facing the stage electrode and pulse power supply device (25) for applying direct current pulse voltage with a frequency of 1Hz to 20kHz to counter electrode. Plasma of film-forming material gas is generated between the stage electrode and the counter electrode. USE - Apparatus for manufacturing graphene film (claimed) used for transparent electrode, wiring and thermal radiation material. ADVANTAGE - The apparatus enables manufacture of graphene film having excellent quality at low temperature and reduced damage to base material and graphene film, with improved productivity. Since the film-forming material gas contains only carbon containing gas, the graphene without terminated hydrogen is synthesized easily. The transparent electrode comprising graphene film has excellent translucency. The graphene film can be directly formed on a copper foil, with reduced thickness. The amorphous formation of the graphene film is suppressed by forming the graphene film into a laminate of 5 or more layers. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of graphene film, in which plasma of carbon containing gas is generated between stage electrode and counter electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the plasma chemical vapor deposition (CVD) apparatus. Graphene film manufacturing apparatus (10) Stage electrode (16) Heater (17) Counter electrode (20) Gas supply system (21) Pulse power supply device (25) Base material (F)