• 专利标题:   Manufacture of meso hollow structure silicon oxide/graphene composite involves dispersing graphite oxide powder and surfactant into solvent, controlling pH, adding silicone salt, maintaining at specific temperature, and controlling pH.
  • 专利号:   KR2013015719-A
  • 发明人:   KIM K B, LEE C W
  • 专利权人:   UNIV YONSEI IND ACADEMIC COOP FOUND
  • 国际专利分类:   B01J020/10, C01B031/02, C01B033/20, C04B035/16
  • 专利详细信息:   KR2013015719-A 14 Feb 2013 C01B-033/20 201358 Pages: 19
  • 申请详细信息:   KR2013015719-A KR077880 04 Aug 2011
  • 优先权号:   KR077880

▎ 摘  要

NOVELTY - Manufacture of meso hollow structure silicon oxide/graphene composite involves dispersing graphite oxide powder and surfactant into solvent, controlling pH to less than 2, adding silicone salt, maintaining at obtained mixture 30-150 degrees C, and controlling pH to 2 or less. USE - Manufacture of meso hollow structure silicon oxide/graphene composite used for mold and energy storage material e.g. secondary battery, fuel cell and super capacitor (all claimed). DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of meso hollow structure silicon oxide/graphene composite.