• 专利标题:   Semiconductor substrate for e.g. forming semiconductor structure comprises substrate having upper surface and ordered array of parallel graphene nanoribbons located on the upper surface of the substrate.
  • 专利号:   US2012181507-A1, US8354296-B2
  • 发明人:   DIMITRAKOPOULOS C D, GRILL A, MCARDLE T J
  • 专利权人:   INT BUSINESS MACHINES CORP
  • 国际专利分类:   B82Y030/00, B82Y040/00, H01L021/20, H01L029/16, H01L051/40
  • 专利详细信息:   US2012181507-A1 19 Jul 2012 H01L-029/16 201250 Pages: 12 English
  • 申请详细信息:   US2012181507-A1 US009048 19 Jan 2011
  • 优先权号:   US009048

▎ 摘  要

NOVELTY - A semiconductor substrate comprises substrate having upper surface and ordered array of parallel graphene nanoribbons (26) located on the upper surface of the substrate. USE - Semiconductor substrate for forming semiconductor structure and semiconductor circuit (claimed). DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) formation of semiconductor structure; and (2) semiconductor circuit. DESCRIPTION OF DRAWING(S) - The drawing shows a top down view of the structure after forming a field effect transistor in ordered array of parallel graphene nanoribbons. Parallel graphene nanoribbons (26) Source regions (52) Drain regions (54) Gate dielectric layer (56) Gate conductor (58)