▎ 摘　　要

NOVELTY - The device has a substrate arranged on an upper part of a diamond-like amorphous carbon film. A source/drain electrode is buried on the diamond-like amorphous carbon film. An upper cover of the source/drain electrode is provided with a single layer or transfer graphene layer. The graphene layer is formed on an insulating medium layer. The insulating medium layer is formed on an upper part of a metal gate electrode. A material of the substrate is formed as a flat curved-shaped structure. A strain of the substrate is made of semiconductor material. USE - Diamond-like semiconductor substrate source/drain buried type graphene transistor device for small size and high frequency integrated circuit. ADVANTAGE - The device realizes planarization process, cleaning of a surface of the substrate and transferring the graphene to a clean substrate via chemical vapor deposition process. The device improves gate electrode covering area of graphene length to reduce gate-source gate drain capacitance and resistance and improves performance and efficiency of a graphene transistor. DETAILED DESCRIPTION - The semiconductor material is made from silicon, polycrystalline silicon, silicon germanium alloy and germanium. An INDEPENDENT CLAIM is also included for a diamond-like substrate source/drain buried type graphene transistor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a diamond-like semiconductor substrate.