▎ 摘　　要

NOVELTY - The sensing device (10) has multiple sensing pixels that are arranged in an array. Each sensing pixel includes active element (TFT), sensing element (SE) and driving element (RFT). Driving element is electrically connected between active element and sensing element. The sensing element includes first electrode layer (102) and amorphous silicon layer (AS) which are positioned in first electrode layer and second electrode layer (104) which are positioned in amorphous silicon layer. A graphene layer (106) is provided to contact with second electrode layer and amorphous silicon layer. USE - Sensing device. ADVANTAGE - The sensing device is effectively manufactured by reducing the number of photolithographic etching process. The process complexity and processing time are reduced. The sensing device is easily manufactured. Te mass production of the sensing device is achieved. The manufacturing cost of the sensing device is reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating the manufacturing method of the sensing device. Sensing device (10) First electrode layer (102) Second electrode layer (104) Graphene layer (106) Amorphous silicon layer (AS) Driving element (RFT) Sensing element (SE) Active element (TFT)