▎ 摘　　要

NOVELTY - The structure has a base heat sink (1) provided with an insulating heat sink. The insulating heat sink is provided with a first insulating heat sink (4), a second insulating heat sink (5) and a semiconductor laser (6) i.e. edge-emission single-tube semiconductor laser, and a graphene film (7). The graphene film covers top regions of the first insulating heat sink, the second insulating heat sink and the semiconductor laser. The secondary insulating heat sink is provided with a first secondary heat sink (2) and a second secondary heat sink (3) i.e. copper heat sink. An insulating film (8) is connected with an electrode (9). The first insulating heat sink and the second insulating heat sink are made of Aluminum nitride. USE - Graphene film based semiconductor laser package structure. ADVANTAGE - The structure solves heat dissipation problem. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene film based semiconductor laser package structure manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene film based semiconductor laser package structure. Base heat sink (1) Secondary heat sinks (2, 3) Insulating heat sinks (4, 5) Semiconductor laser (6) Graphene film (7) Insulating film (8) Electrode (9)