• 专利标题:   Preparation of graphene/metal organic frame composite photo-responsive device involves preparing silica/silicon flakes with reduced graphene oxide on surface, evaporating electrode, and preparing metal organic framework.
  • 专利号:   CN113737152-A, CN113737152-B
  • 发明人:   GUO X, JI D, XU W, GAO G, CAO L, FANG X
  • 专利权人:   UNIV HEILONGJIANG BAYI AGRIC
  • 国际专利分类:   C08G083/00, C23C014/04, C23C014/18, C23C014/24, C23C014/58, C23C016/26, C23C028/00
  • 专利详细信息:   CN113737152-A 03 Dec 2021 C23C-016/26 202234 Chinese
  • 申请详细信息:   CN113737152-A CN11035389 02 Sep 2021
  • 优先权号:   CN11035389

▎ 摘  要

NOVELTY - Preparation of graphene/metal organic frame composite photo-responsive device comprises dispersing graphene oxide in N,N-dimethylformamide to obtain a solution of graphene oxide in N,N-dimethylformamide; ultrasonically dispersing, standing, and taking upper layer solution containing graphene oxide; preparing hydrophilic treated silica/silicon wafers; dropping the single-layer graphene oxide solution onto the front surface of the hydrophilic treated silica/silicon sheet, spin-coating, and drying; and repeating process for 3-5 times, putting in chemical vapor deposition furnace, and annealing; vapor-depositing two electrodes on both ends of the silica/silicon sheet with reduced graphene oxide by a mask method; and dispersing 5,10,15,20-tetrakis(4-hydroxyphenyl)porphyrin into N,N-dimethylformamide; dissolving copper acetate in N,N-dimethylformamide; mixing solutions; and adding to the reduced graphene oxide on the silica/silicon flakes and vacuum drying. USE - The method is used for preparing graphene/metal organic frame composite photo-responsive device. ADVANTAGE - The device has light response efficiency of 1.8-3.3 A/W and light response time of 10-30 seconds. DETAILED DESCRIPTION - Preparation of graphene/metal organic frame composite photo-responsive device comprises: (A) dispersing graphene oxide in N,N-dimethylformamide to obtain a solution of graphene oxide in N,N-dimethylformamide; ultrasonically dispersing, standing for 10-14 hours, and taking upper layer solution containing graphene oxide; preparing hydrophilic treated silica/silicon wafers; dropping the single-layer graphene oxide solution onto the front surface of the hydrophilic treated silica/silicon sheet, spin-coating, and drying; and repeating process for 3-5 times, putting in chemical vapor deposition furnace, and annealing under inert gas atmosphere at 380-420degreesC; (B) vapor-depositing two electrodes on both ends of the silica/silicon sheet with reduced graphene oxide by a mask method; and (C) dispersing 5,10,15,20-tetrakis(4-hydroxyphenyl)porphyrin into N,N-dimethylformamide to obtain 5,10,15,20-tetrakis(4-hydroxyphenyl)) porphyrin solution; dissolving copper acetate in N,N-dimethylformamide to obtain a copper acetate solution; mixing 5,10,15,20-tetrakis (4-hydroxyphenyl) porphyrin solution and copper acetate solution at molar ratio of 4:1; and adding the mixed solution dropwise to the reduced graphene oxide on the silica/silicon flakes where the two electrodes are evaporated and vacuum drying.