• 专利标题:   Brazing zirconium carbide-silicon carbide ceramics and titanium alloy by zirconium hydride powder to pure copper powder, spreading on silicon wafer, using plasma enhanced chemical vapor deposition method to grow graphene, and tableting.
  • 专利号:   CN112427759-A, CN112427759-B
  • 发明人:   ZHANG L, CHEN X, SUN Z, CHEN B, CHANG Q, FENG J
  • 专利权人:   HARBIN INST TECHNOLOGY
  • 国际专利分类:   B23K001/008, B23K001/20, B23K003/08
  • 专利详细信息:   CN112427759-A 02 Mar 2021 B23K-001/008 202127 Pages: 8 Chinese
  • 申请详细信息:   CN112427759-A CN11163385 27 Oct 2020
  • 优先权号:   CN11163385

▎ 摘  要

NOVELTY - Method for brazing zirconium carbide-silicon carbide ceramics and titanium alloy (TC4) involves (a) adding zirconium hydride powder as a dispersant to pure copper powder, mixing thoroughly and spreading uniformly on the silicon wafer, (b) using the plasma enhanced chemical vapor deposition method to grow graphene on the surface of the copper powder on the silicon wafer to obtain copper product (VFG-copper), (c) mixing 80-92 %mass VFG-copper and zirconium hydride (remaining quantity) and mixing uniformly to obtain a mixed powder, (d) carrying out tableting processing on the obtained mixed powder to obtain a solder foil, (e) pre-cleaning the zirconium carbide-silicon carbide ceramics and titanium alloy (TC4) to be brazed, and (f) placing the obtained solder foil between the pre-cleaned zirconium carbide-silicon carbide ceramic and titanium alloy, assembling, brazing and cooling with furnace to obtain the product. USE - The method is useful for brazing zirconium carbide-silicon carbide ceramics and titanium alloy (TC4). ADVANTAGE - The method solves problems of poor wettability of brazing filler metal to base material, easy generation of brittle compounds in the brazing seam, excessive dissolution of the metal base material and large residual stress in the joint during brazing.